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ZXTS1000E6
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE
SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A
DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
SOT23-6
FEATURES * * * * * Low Saturation Transistor High Gain - 300 minimum Low VF, fast switching Schottky Mobile telecomms, PCMCIA & SCSI DC-DC Conversion
APPLICATIONS
ORDERING INFORMATION DEVICE ZXTS1000E6TA ZXTS1000E6TC DEVICE MARKING 1000 REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed
8mm embossed
QUANTITY PER REEL 3000 units 10000 units
Top View
ISSUE 1 - NOVEMBER 2000 1
ZXTS1000E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Transistor Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Schottky Diode Continuous Reverse Voltage Forward Current Non Repetitive Forward Current t100s t 10ms Package Power Dissipation at T amb =25C single die "on" both die "on" Storage Temperature Range Junction Temperature PD T stg Tj 0.725 0.885 -55 to +150 125 W W C C VR IF I FSM 40 0.5 6.75 3 V A A A V CBO V CEO V EBO IC -12 -12 -5 -1.25 V V V A SYMBOL VALUE UNIT
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) single die "on" both die "on" SYMBOL R JA R JA VALUE 138 113 UNIT C/W C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
ISSUE 1 - NOVEMBER 2000 2
ZXTS1000E6
TRANSISTOR TYPICAL CHARACTERISTICS
0.4
+25C
0.4
IC/IB=50
VCE(sat) - (V)
IC/IB=10 IC/IB=50 IC/IB=100
VCE(sat) - (V)
0.3
0.3
-55C +25C +100C +150C
0.2
0.2
0.1
0.1
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
800
VCE=2V
1.0 0.8
IC/IB=50
hFE - Typical Gain
VBE(sat) - (V)
600
+100C
0.6 0.4 0.2 0
-55C +25C +100C +150C
400
+25C
200
-55C
0 1m 10m 100m 1 10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
1.0 0.8
10
IC - Collector Current (A)
VBE(on) - (V)
1
DC 1s 100ms 10ms 1ms 100s
0.6 0.4 0.2 0
-55C +25C +100C +150C
100m
1m
10m
100m
1
10
10m 100m
1
10
100
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
ISSUE 1 - NOVEMBER 2000 3
ZXTS1000E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
TRANSISTOR ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) -25 -55 -110 -160 -185 -990 -850 300 300 200 125 75 30 490 450 340 250 140 80 220 15 50 135 MHz pF ns ns -12 -12 -5 -10 -10 -10 -40 -100 -175 -215 -240 -1100 -1000 V V V nA nA nA mV mV mV mV mV mV mV I C = -100A I C = -10mA* I E = -100A V CB =-10V V EB =-4V V
CES =-10V
IC= IC= IC= IC= IC=
-0.1A, I B = -10mA* -0.25A, I B =-10 mA* -0.5A, I B =-10 mA* -1A, I B = -50mA* -1.25A, I B = -100mA*
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
V BE(sat) V BE(on) h FE
IC= -1.25A, IB= -100mA* I C = -1.25A, V CE = 2V* IC= IC= IC= IC= IC= IC= -10mA, V CE =-2V* -0.1A, V CE = -2V* -0.5A, V CE = -2V* -1.25A, V CE =-2V* -2A, V CE = -2V* -3A, V CE = -2V*
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT C obo t (on) t (off)
I C = -50mA, V CE =-10 V f= 100MHz V CB = -10V, f=1MHz V CC = -10V, I C =-1A I B1 =I B2 =-100mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage Forward Voltage V (BR)R VF 40 60 270 300 370 425 550 640 810 15 20 10 300 350 460 550 670 780 1050 40 V mV mV mV mV mV mV mV A pF ns I R =200A I F =50mA* I F =100mA* I F =250mA* I F =500mA* I F =750mA* I F =1000mA* I F =1500mA* V R =30V f=1MHz,V R =30V switched from IF = 500mA to I R = 500mA Measured at IR = 50mA
Reverse Current Diode Capacitance Reverse Recovery Time
IR CD t rr
*Measured under pulsed conditions.
ISSUE 1 - NOVEMBER 2000 4
ZXTS1000E6
DIODE TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2000 5
ZXTS1000E6
PACKAGE DIMENSIONS PAD LAYOUT DETAILS
b
e L2
E
E1
e1 D
a
DATUM A
C
A
A2
A1
DIM Millimetres Min A A1 A2 b C D E E1 L e e1 L 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.10 0.95 REF 1.90 REF
0
Inches Min 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 0.004 0.037 REF 0.074 REF Max 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 0.002
Max 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.60
10
0
10
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c) Zetex plc 2000 www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - NOVEMBER 2000 8

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